ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 5082-2811, 808852, 91300907, VBE408-20, JAN1N5712A under NSN 5961-00-048-7106 of Semiconductor Device Diode manufactured by Genrad Ltd, Nai Technologies Inc, Thales Sa, Thales Nederland Bv, Adelco Elektronik Gmbh.
Federal Supply Class of NSN 5961-00-048-7106 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
| Associated Parts Numbers of NSN 5961-00-048-7106 | ||||||
|---|---|---|---|---|---|---|
| Part Number | Manufacturer | Item Name | Cage Code | Type | Status | RFQ |
| 5082-2811 | genrad ltd | semiconductor device diode | 24655 | A | F | RFQ |
| 808852 | nai technologies inc | semiconductor device diode | 07342 | A | F | RFQ |
| 91300907 | thales sa | semiconductor device diode | f6481 | E | A | RFQ |
| VBE408-20 | thales nederland bv | semiconductor device diode | h0203 | F | A | RFQ |
| JAN1N5712A | adelco elektronik gmbh | semiconductor device diode | c7191 | E | R | RFQ |
| 1N5712 | electronic industries inc | semiconductor device diode | 80131 | NSN | Avl | RFQ |
| 9999-7209 | flightline electronics inc | semiconductor device diode | 50027 | A | A | RFQ |
| 4809-02-2811 | wavetek u s inc | semiconductor device diode | 23338 | A | F | RFQ |
| 10133031 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | H | A | RFQ |
| EAW682 | hewlett-packard company | semiconductor device diode | 28480 | A | A | RFQ |
| F412 | nautel maine inc | semiconductor device diode | 57655 | F | A | RFQ |
| MILS19500-445 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| JAN1N5712 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| MIL-PRF-19500/444 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| A2X1299 | fei microwave inc | semiconductor device diode | 21847 | A | R | RFQ |
| 40-001020-03 | interlink communications inc | semiconductor device diode | 30890 | A | H | RFQ |
| 919460 | thales defence systems | semiconductor device diode | k2490 | E | R | RFQ |
| 750111-1 | raytheon company | semiconductor device diode | 05869 | A | A | RFQ |
| JANTX1N5712 | joint army-navy specifications | semiconductor device diode | 81350 | NSN | Avl | RFQ |
| JAN1N5712-1 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| HP5082-2811 | hewlett-packard company | semiconductor device diode | k3464 | E | A | RFQ |
| 7906714-00 | lockheed martin corporation | semiconductor device diode | 90536 | A | A | RFQ |
| Q68000-A3908-Z | epcos ag | semiconductor device diode | d1180 | E | R | RFQ |
| 919460 | thales uk ltd | semiconductor device diode | k0162 | E | A | RFQ |
| 812811-001 | evans and sutherland computer corp | semiconductor device diode | 53938 | A | A | RFQ |
| EAW681 | mbda incorporated | semiconductor device diode | k0967 | E | A | RFQ |
| 5082-1N5712 | avago technologies us inc | semiconductor device diode | 50434 | A | A | RFQ |
| 1N5712 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| 101000242 | data general corp | semiconductor device diode | 34984 | A | A | RFQ |
| 1N5712 | enterprise electronics corporation | semiconductor device diode | 20589 | A | H | RFQ |
| 181-9243 | rs components limited | semiconductor device diode | fa0q5 | E | A | RFQ |
| 610005 | logimetrics inc | semiconductor device diode | 33013 | A | A | RFQ |
| 5322-130-30655 | philips electrical ltd | semiconductor device diode | k0351 | E | H | RFQ |
| 1N5712 | hewlett-packard company | semiconductor device diode | 28480 | A | A | RFQ |
| 1N7512 | freescale semiconductor inc | semiconductor device diode | 04713 | A | A | RFQ |
| 77068099 | alcatel lucent | semiconductor device diode | f6180 | E | A | RFQ |
| 44397 28144 | thales electronic systems gmbh | semiconductor device diode | d8385 | E | A | RFQ |
| 352250019199 | thales nederland bv | semiconductor device diode | h0203 | F | A | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.250 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.065 INCHES MINIMUM AND 0.076 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 16.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE,MAXIMUM PEAK TOTAL VALUE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT,DC |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/445 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-048-7106, 5961000487106 | ||||
| 5905-00-000-0136 (5905000000136) | 5905-00-001-2573 (5905000012573) | 5905-00-001-2812 (5905000012812) | 5905-00-001-2813 (5905000012813) | |
| 5905-00-001-2814 (5905000012814) | 5905-00-001-2815 (5905000012815) | 5905-00-001-2818 (5905000012818) | 5905-00-001-2819 (5905000012819) | |
| 5905-00-001-2821 (5905000012821) | 5905-00-001-2822 (5905000012822) | 5905-00-001-2826 (5905000012826) | 5905-00-001-2827 (5905000012827) | |
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AS9120B and ISO 9001:2015 |
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Aviation Suppliers Association Member |
 |
FAA AC 0056B Accredited |
 |
AS 6081:2012 Certification |
 |
ESD S20.20-2014 Certification |
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