ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 19A115528P10, MIL-S-19500/115F, JAN1N3029B, 5961PL1277779, JAN1N3029BA under NSN 5961-00-837-9288 of Semiconductor Device Diode manufactured by General Electric Company, Military Specifications, Joint Army-Navy Specifications, Inspektorat Wsparcia Sil Zbrojnych, Adelco Elektronik Gmbh.
Federal Supply Class of NSN 5961-00-837-9288 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
| Item Name | Semiconductor Device Diode |
| INC Code | 20589 |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-837-9288 (008379288) |
| NCB Code | USA (00) |
| Manufacturer | General Electric Company, Military Specifications, Joint Army-Navy Specifications, Inspektorat Wsparcia Sil Zbrojnych, Adelco Elektronik Gmbh, Raytheon Company, Litton Systems Inc, General Dynamics Mission Systems, Freescale Semiconductor Inc, Dne Technologies Inc, Rockwell Collins Aerospace, Elettronica Gmbh, Thales Electronic Systems Gmbh, Bae Systems Inc |
| Associated Parts Numbers of NSN 5961-00-837-9288 | ||||||
|---|---|---|---|---|---|---|
| Part Number | Manufacturer | Item Name | Cage Code | Type | Status | RFQ |
| 19A115528P10 | general electric company | semiconductor device diode | 08771 | A | A | RFQ |
| MIL-S-19500/115F | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| JAN1N3029B | joint army-navy specifications | semiconductor device diode | 81350 | NSN | Avl | RFQ |
| 5961PL1277779 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | H | A | RFQ |
| JAN1N3029BA | adelco elektronik gmbh | semiconductor device diode | c7191 | E | R | RFQ |
| 4178600-119 | raytheon company | semiconductor device diode | 05869 | A | A | RFQ |
| 1N3029B | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| 947179-292 | litton systems inc | semiconductor device diode | 13973 | A | R | RFQ |
| 1M25Z5 | general dynamics mission systems | semiconductor device diode | 1vpw8 | F | A | RFQ |
| 1N3029 | freescale semiconductor inc | semiconductor device diode | 04713 | A | A | RFQ |
| JAN1N3029B | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| 40020161-000 | dne technologies inc | semiconductor device diode | 96238 | A | A | RFQ |
| 353-3059-000 | rockwell collins aerospace | semiconductor device diode | 13499 | A | A | RFQ |
| 521-034-034 | elettronica gmbh | semiconductor device diode | c3141 | E | A | RFQ |
| MIL-PRF-19500/115 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| 44397 28109 | thales electronic systems gmbh | semiconductor device diode | d8385 | E | A | RFQ |
| 1N3029BMILS19500-115 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| 7538002P089 | bae systems inc | semiconductor device diode | 94117 | A | A | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/115 GOVERNMENT SPECIFICATION |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 24.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 40.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| Relevant Components for NSN - 5961-00-837-9288, 5961008379288 | ||||
| 5905-00-000-0136 (5905000000136) | 5905-00-001-2573 (5905000012573) | 5905-00-001-2812 (5905000012812) | 5905-00-001-2813 (5905000012813) | |
| 5905-00-001-2814 (5905000012814) | 5905-00-001-2815 (5905000012815) | 5905-00-001-2818 (5905000012818) | 5905-00-001-2819 (5905000012819) | |
| 5905-00-001-2821 (5905000012821) | 5905-00-001-2822 (5905000012822) | 5905-00-001-2826 (5905000012826) | 5905-00-001-2827 (5905000012827) | |
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AS9120B and ISO 9001:2015 |
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Aviation Suppliers Association Member |
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FAA AC 0056B Accredited |
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AS 6081:2012 Certification |
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ESD S20.20-2014 Certification |
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