ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 1N768, Z5411, JAN1N968B, SZ14237H-1C, 353-8505-480 under NSN 5961-01-114-0707 of Semiconductor Device Diode manufactured by Telcom Semiconductor Inc, Itt Semiconductors, Military Specifications, Freescale Semiconductor Inc, Rockwell Collins Aerospace.
Federal Supply Class of NSN 5961-01-114-0707 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
| Item Name | Semiconductor Device Diode |
| INC Code | 20589 |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-114-0707 (011140707) |
| NCB Code | USA (01) |
| Manufacturer | Telcom Semiconductor Inc, Itt Semiconductors, Military Specifications, Freescale Semiconductor Inc, Rockwell Collins Aerospace, Microsemi Corporation, Teledyne Technologies Inc, Raytheon Company, Dla Land And Maritime, On Semiconductor Corporation, Tektronix Gmbh, Hamilton Sundstrand Corporation, General Dynamics Mission Systems, L 3 Communications Corporation |
| Associated Parts Numbers of NSN 5961-01-114-0707 | ||||||
|---|---|---|---|---|---|---|
| Part Number | Manufacturer | Item Name | Cage Code | Type | Status | RFQ |
| 1N768 | telcom semiconductor inc | semiconductor device diode | 15818 | A | F | RFQ |
| Z5411 | itt semiconductors | semiconductor device diode | 15238 | A | F | RFQ |
| JAN1N968B | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| SZ14237H-1C | freescale semiconductor inc | semiconductor device diode | 04713 | A | A | RFQ |
| 353-8505-480 | rockwell collins aerospace | semiconductor device diode | 95105 | A | A | RFQ |
| MIL-S-19500/117 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| TD333813 | microsemi corporation | semiconductor device diode | 43611 | A | A | RFQ |
| TD333813 | teledyne technologies inc | semiconductor device diode | 16170 | F | A | RFQ |
| MIL-PRF-19500/117 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| JAN1N968B | freescale semiconductor inc | semiconductor device diode | 04713 | A | A | RFQ |
| 925526-1C | raytheon company | semiconductor device diode | 82577 | F | A | RFQ |
| L00854 | dla land and maritime | semiconductor device diode | 16236 | A | A | RFQ |
| SZ14237H-1C | on semiconductor corporation | semiconductor device diode | 5v1p1 | A | A | RFQ |
| 152-0304-00 | tektronix gmbh | semiconductor device diode | 80009 | A | A | RFQ |
| 418036-131 | raytheon company | semiconductor device diode | 96214 | A | A | RFQ |
| 40731-2 | hamilton sundstrand corporation | semiconductor device diode | 99167 | A | A | RFQ |
| 1N968A | freescale semiconductor inc | semiconductor device diode | 04713 | A | A | RFQ |
| JANTX1N968B-1 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| 12043-0098 | raytheon company | semiconductor device diode | 06845 | A | A | RFQ |
| 1-4M20Z5 | general dynamics mission systems | semiconductor device diode | 1vpw8 | F | A | RFQ |
| 104-310-268 | l 3 communications corporation | semiconductor device diode | 20747 | A | A | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | VOLTAGE REGULATOR |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 6.20 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 19.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | SEMICONDUCTOR DEVICE,DIODE |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-01-114-0707, 5961011140707 | ||||
| 5905-00-000-0136 (5905000000136) | 5905-00-001-2573 (5905000012573) | 5905-00-001-2812 (5905000012812) | 5905-00-001-2813 (5905000012813) | |
| 5905-00-001-2814 (5905000012814) | 5905-00-001-2815 (5905000012815) | 5905-00-001-2818 (5905000012818) | 5905-00-001-2819 (5905000012819) | |
| 5905-00-001-2821 (5905000012821) | 5905-00-001-2822 (5905000012822) | 5905-00-001-2826 (5905000012826) | 5905-00-001-2827 (5905000012827) | |
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AS9120B and ISO 9001:2015 |
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Aviation Suppliers Association Member |
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FAA AC 0056B Accredited |
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AS 6081:2012 Certification |
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ESD S20.20-2014 Certification |
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