TC511000AJ80 by Toshbia with NSN 5962-01-540-5492 - Submit a Quote

Part Number:  TC511000AJ80
Manufacturer:  toshbia
Item Name :  microcircuit memory
CAGE Code:  0DV96
INC Code:  41015

ASAP Aviation Procurement is pleased to announce that part number TC511000AJ80 of NSN 5962-01-540-5492 is now available and in stock. We can get you one of the fastest and most competitive quotes on this part. Part number TC511000AJ80 is a Microcircuit Memory manufactured by Toshbia under CAGE Code 0DV96. Simply fill out the Request for Quote (RFQ) form provided here to get started on your quote. In order to make sure that we get you your quote in a timely manner, please take the time to make sure that all fields are completely filled out, particularly the asterisk-marked (*) fields like Parts Needed By and Quantity (ea). 

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Disclaimer: This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/customer-terms-and-conditions/. All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without 6RE77 is void.

NSN Information for Part Number TC511000AJ80 with NSN 5962-01-540-5492, 5962015405492

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-540-5492

Item PartTypeName:

MICROCIRCUIT,MEMORY

5962015405492NA
CIICHCCESDPMICCriticalityENAC
AA0
Part NumberISCRNVCRNCCHCCMSDSSADC
TC511000AJ80523

Characteristics Data of NSN 5962-01-540-5492, 5962015405492

MRCCriteriaCharacteristic
AFGAOPERATING TEMP RANGE+0.0/+70.0 DEG CELSIUS"
AGAVEND ITEM IDENTIFICATIONRADAR 3D E/F BAND RAT-31 SL/T"
CBBLFEATURES PROVIDED3-STATE OUTPUT"
CQSJINCLOSURE MATERIALMETAL AND OXIDE"
CQSZINCLOSURE CONFIGURATIONPIN GRID ARRAY"
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC"
CXCYPART NAME ASSIGNED BY CONTROLLING AGENCYFAST PAGE MODE DRAM"
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC5.0 VOLTS NOMINAL POWER SOURCE"
CZEQTIME RATING PER CHACTERISTIC45.00 NANOSECONDS NOMINAL INPUT"
CZERMEMORY DEVICE TYPERAM"
CZZZMEMORY CAPACITY128K X 8"
TTQYTERMINAL TYPE AND QUANTITY24 PIN"
AFGAOPERATING TEMP RANGE+0.0/+70.0 DEG CELSIUS"
AGAVEND ITEM IDENTIFICATIONRADAR 3D E/F BAND RAT-31 SL/T"
CBBLFEATURES PROVIDED3-STATE OUTPUT"
CQSJINCLOSURE MATERIALMETAL AND OXIDE"
CQSZINCLOSURE CONFIGURATIONPIN GRID ARRAY"
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC"
CXCYPART NAME ASSIGNED BY CONTROLLING AGENCYFAST PAGE MODE DRAM"
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC5.0 VOLTS NOMINAL POWER SOURCE"
CZEQTIME RATING PER CHACTERISTIC45.00 NANOSECONDS NOMINAL INPUT"
CZERMEMORY DEVICE TYPERAM"
CZZZMEMORY CAPACITY128K X 8"
TTQYTERMINAL TYPE AND QUANTITY24 PIN"

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